Simulation of the Band Structure of InAs/GaSb Type II Superlattices Utilizing Multiple Energy Band Theories

Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due their excellent photoelectric properties and flexible adjustable band structures. Among these compounds, InAs/GaSb represent most commonly studied materials. However, sophisticated physics associated with antimonide-based bandgap engineering concept started at beginning of 1990s gave a new impact interest in development detector structures within academic national laboratories. are disconnected structure electrons holes confined InAs GaSb layers, respectively. The electron miniband hole can be regulated separately by adjusting thickness which facilitates design superlattice optimizes value offset. In recent years, both domestic foreign researchers have made many attempts quickly accurately predict bandgaps before grow. These works constituted theoretical basis effective utilization system material optimization designing SL structures; they also provided an opportunity preparation rapid T2SLs. this paper, we systematically review several widely used methods simulating structures, including k·p perturbation method, envelope function approximation, empirical pseudopotential tight-binding first-principles calculations. With limitations different proposed, simulation been modified developed obtain reliable energy calculation results. objective work provide reference